S.O.G. FILM HARDEN METHOD USING ULTRA-VIOLET LAY

摘要

The mfg. method of multi-layer metal structure for a semiconductor device is characterized by depositing an insulating material and a first metal layer on the silicon substrate in order, forming a LTO oxide film on the upper and side surface of the metal layer, depositing a SOG film on the LTO film, forming a second STO oxide film on the SOG film, and depositing a second metal layer on the second LTO film to form a pattern. In the method. The SOG film is hardened by the ultraviolet irradiation. The hardening method prevents a generation of the crack, and improves an insulating property.