SOLID STATE IMAGING DEVICE WHICH HAS A SHORT TIME CONSTANT WHICH IS SHORTER THAN THE APPLICATION OF A PULSE VOLTAGE UNTIL THE END OF THE BLANKING PERIOD

摘要

The present invention is concerned with a solid state imaging device wherein a pulse voltage is applied to a semiconductor substrate to carry out an electronic shuttering operation in a blanking period. An output circuit comprising a MIS transistor formed in a well region on the semiconductor substrate. The impurity concentration and the junction depth of the well region are set so that a time constant determined by parasitic capacitances and resistances of the well region becomes shorter than the period which elapses since the application of the pulse voltage until the expiration of the blanking period, to suppress fluctuations in the level or gain of the MIS transistor due to the pulse voltage to prevent adverse effects on the output signals.