发明名称 GASIFICATION DEVICE, SUBSTRATE PROCESSING DEVICE AND SEMICONDUCTOR DEVICE PRODUCTION METHOD
摘要 [Problem] To provide a technique for generating stably a gasified gas in a liquid gasification process. [Solution] The gasification device comprises: a gasification container having an introduction port and an discharge port for a carrier gas; a dripping nozzle constituted in such a manner as to drip into a gasification container a liquid containing two or more substances whereof the boiling points inside the gasification container are different; a first gasification surface, which is horizontal or is inclined with respect to the horizontal, provided inside the gasification container at a dripping position of the liquid from the dripping nozzle; a heater for heating the first gasification surface; and an inclination angle adjustment mechanism for adjusting the inclination angle of the first gasification surface.
申请公布号 WO2016199193(A1) 申请公布日期 2016.12.15
申请号 WO2015JP66488 申请日期 2015.06.08
申请人 HITACHI KOKUSAI ELECTRIC INC. 发明人 TATENO, Hideto;HARA, Daisuke
分类号 H01L21/31;C23C16/455 主分类号 H01L21/31
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