发明名称 |
GASIFICATION DEVICE, SUBSTRATE PROCESSING DEVICE AND SEMICONDUCTOR DEVICE PRODUCTION METHOD |
摘要 |
[Problem] To provide a technique for generating stably a gasified gas in a liquid gasification process. [Solution] The gasification device comprises: a gasification container having an introduction port and an discharge port for a carrier gas; a dripping nozzle constituted in such a manner as to drip into a gasification container a liquid containing two or more substances whereof the boiling points inside the gasification container are different; a first gasification surface, which is horizontal or is inclined with respect to the horizontal, provided inside the gasification container at a dripping position of the liquid from the dripping nozzle; a heater for heating the first gasification surface; and an inclination angle adjustment mechanism for adjusting the inclination angle of the first gasification surface. |
申请公布号 |
WO2016199193(A1) |
申请公布日期 |
2016.12.15 |
申请号 |
WO2015JP66488 |
申请日期 |
2015.06.08 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC. |
发明人 |
TATENO, Hideto;HARA, Daisuke |
分类号 |
H01L21/31;C23C16/455 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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