| 摘要 |
Provided are a high optical efficiency vertical LED structure chip with a heat dissipation characteristic and a manufacturing method therefor. The structure thereof comprises an N-type semiconductor layer (10), a P-type semiconductor layer (20) and an active layer (30). The active layer (30) is provided between the N-type semiconductor layer (10) and the P-type semiconductor layer (20). The N-type semiconductor layer (10), the P-type semiconductor layer (20) and the active layer (30) form a PN junction. A first transparent heat dissipation layer (40) is provided on the top surface of the N-type semiconductor layer (10). A second transparent heat dissipation layer (50) is provided on the bottom surface of the P-type semiconductor layer (20). A first transparent conductive layer (41) is provided between the N-type semiconductor layer (10) and the first transparent heat dissipation layer (40). A second transparent conductive layer (51) is provided between the P-type semiconductor layer (20) and the second transparent heat dissipation layer (50). A first electrode (42) is electronically connected to the first transparent conductive layer (41). A second electrode (52) is electronically connected to the second transparent conductive layer (51). |
