发明名称 |
Creation and removal of temporary silicon dioxide structures on an in-process integrated circuit with minimal effect on exposed, permanent silicon dioxide structures |
摘要 |
A process for creating and removing temporary silicon dioxide structures on an in-process integrated circuit with minimal effect on existing permanent silicon dioxide structures that are exposed. The process comprises the steps of blanket depositing an ozone-TEOS silicon dioxide layer through chemical vapor deposition on top of the in-process integrated circuit, thus covering permanent structures formed from conventional silicon dioxides (e.g. TEOS and thermal oxides), etching the ozone-TEOS layer to create said temporary structures, and removing the temporary structures using dilute hydrofluoric acid.
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申请公布号 |
US5069747(A) |
申请公布日期 |
1991.12.03 |
申请号 |
US19900633573 |
申请日期 |
1990.12.21 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
CATHEY, DAVID A.;TUTTLE, MARK E.;LEE, RUOJIA;LOWREY, TYLER A. |
分类号 |
H01L21/033;H01L21/266;H01L21/316;H01L21/336;H01L21/8242;H01L27/10;H01L27/108;H01L29/78 |
主分类号 |
H01L21/033 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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