发明名称 |
SPECIAL GEOMETRY SCHOTTKY DIODE |
摘要 |
A Schottky barrier diode comprises a Schottky contact layer having an increased periphery to area ratio. In the illustrated embodiment, the Schottky contact layer comprises a plurality of individual contact regions interconnected by an overlying metallization layer.
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申请公布号 |
CA2023737(A1) |
申请公布日期 |
1992.02.22 |
申请号 |
CA19902023737 |
申请日期 |
1990.08.21 |
申请人 |
SOLID STATE DEVICES, INC. |
发明人 |
BARTUR, MEIR |
分类号 |
H01L29/86;(IPC1-7):H01L29/86 |
主分类号 |
H01L29/86 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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