| 发明名称 |
Apparatus for fabricating piezoelectric films |
| 摘要 |
When a piezoelectric film is formed on an semiconductor MOS substrate by the sputtering method, an apparatus for fabricating piezoelectric films according to the present invention can reduce damage in the MOS as far as possible.
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| 申请公布号 |
US5092978(A) |
申请公布日期 |
1992.03.03 |
| 申请号 |
US19900632345 |
申请日期 |
1990.12.21 |
| 申请人 |
CLARION CO., LTD. |
发明人 |
KOJIMA, KIYOAKI;CHUBACHI, YOSHIKI;AOYAMA, KAZUSHI |
| 分类号 |
H01L41/22;C23C14/50;H01L21/203;H03H3/02;H03H9/72 |
主分类号 |
H01L41/22 |
| 代理机构 |
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