Radiation-sensitive polymer and radiation-sensitive composition containing the same

摘要

A radiation-sensitive polymer is capable of resistance to the dry etching when it is applied to form very fine patterns in VLSIs and other semiconductor devices, wherein the polymer is a radiation-sensitive polymer that contains at least one unit represented by the general formula (I): <IMAGE> (I) (where X is an alkyl group, a halogen atom or a halogenated alkyl group; R1 is an alkyl group, an alkoxy or an aryl group; R2 is carbon monoxide; M is Si, Ge, Sn, Ti, Mo or W; k is a number defined by the valence of (M minus 1); and l is zero or a positive integer), and which optionally contains at least one unit represented by the general formula (II): <IMAGE> (II) (where Y is an alkyl group, a halogen atom or a halogenated alkyl group; R3 is an alkyl group or an aryl group) and/or at least one unit represented by the general formula (III): -SO2-R4(III) (where R4 is a divalent alkyl or aryl group).