VERFAHREN ZUR HERSTELLUNG EINER ANSCHLUSSELEKTRODE EINER HALBLEITERANORDNUNG.

摘要

A method for producing a semiconductor device comprises the steps of: forming an insulating layer (13) on a semiconductor subs trate (11) provided with an electrode portion (12), forming a barrier metal layer (16) over the surface, forming a groove (18) in the barrier metal layer (16) so that the groove surrounds the electrode portion (12), introducing a stopper material (20) in the groove (18), forming a bump (22) on the barrier metal layer (16b) positioned on the electrode portion (12), and removing the barrier metal layer (16a) outside of the stopper (22). The stopper material (20) prevents the removal of the inside barrier metal layer (16b) during the removal of the outside barrier metal layer (16a).