| 摘要 |
A circuit is described as a generating supply-independent voltage reference. In MOS technology, a current mirror section incorporating a pair of N-channel and W-channel tracking devices are coupled to a power supply Vcc for generating a voltage reference output that is directly proportional to Vtn-Vtw. Vtn is the gate threshold voltage of the N-channel device, while Vtw is the gate threshold voltage of W-channel device. A start-up circuit is further coupled to the power supply Vcc and to the current mirror section for maintaining the operating point V1 of the circuit that is independent of supply voltage. The degree of supply independence can be further increased by adding a pair of P-channel device to the output of the present invention. Thus, the present invention generates a voltage reference that is independent from power supply, temperature and process while minimizing power dissipation. When the present invention replaces the power supply to the sensing circuit of non-volatile memory devices such as an EPROM the overshoot encountered during the read mode is minimized. It follows that the present invention not only solves one of the key yield losses seen on non-volatile memory devices but also improves the access time for the same devices.
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