SENSE AMP OF DRAM HAVING DOUBLE POWER LINE

摘要

The sense amplifier for partially activated dynamic RAM has fast sense operation and sense current having lower peak value. The sense amplifier includes a MOSFET (Q7) connected between an N- channel sense amplifier (3) and Vss line and controlled by a second control signal, a MOSFET (Q8) connected between an N- channel sense amplifier (3) and Vss and controlled by a fourth control signal, a MOSFET (Q3) connected between a P-channel sense amplifier (2) and Vcc and controlled by a first control signal, and a MOSFET (Q4) connected between a P channel sense amplifier and Vcc controlled by a third control signal.