| 摘要 |
A method for manufacturing a semiconductor memory device and the resulting device, wherein the MOSFET is electrically connected to the double stacked capacitor through a contact hole which comprises: a dielectric film deposited on the sidewall of the contact hole with conductive spacers and conductive material layers to form a charge storage electrode of the double stacked capacitor in a first embodiment; a dielectric film deposited on the sidewall of the contact hole with conductive material layers to form a charge storage electrode of the double stacked capacitor in a second embodiment; a dielectric film deposited on the sidewall of the contact hole with conductive spacers and conductive material layers to form a second charge storage electrode of the double stacked capacitor in a third embodiment; and, a dielectric film deposited on the sidewall of the contact hole with conductive material layers to form a second charge storage electrode of the double stacked capacitor in a fourth embodiment.
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