STACKED DRAM CELL AND METHOD OF MANUFACTURING THE SAME

摘要

The method for increasing the size of a storage node comprises the steps of defining an active area on a P type silicon substrate (1), implanting B ions into the substrate (1) excluding the active area to form a P-plus doping layer (5) to form a field oxide film (4) thereon, forming first and second gate electrodes at the active area, implanting and heat-treating impurities into the active area excluding the electrodes region to form an n-plus doping layer (1a) as a source and drain region, forming a bit line (10) between the first and second gate electrodes, forming a first storage node (14) thereon, and forming a capacitor plate (17) thereon to form a second storage node (20) thereon.