Multilayer pattern transfer for chemical guides

摘要

Approaches for multilayer pattern transfer for chemical guides are provided. In a typical embodiment, a device is formed by forming an etch mask layer (e.g., a nitride layer and an oxide layer) over a substrate (e.g., silicon (Si)). An orientation control layer (e.g., a neutral layer) is then formed over the etch mask layer, and an ARC layer (e.g., SiARC) is formed over the orientation control layer. In other embodiments, an organic planarization layer (OPL) and/or a protection layer may also be formed between the ARC layer and the orientation control layer. Regardless, a tapered etch profile/pattern may then be formed through the ARC and/or other layers.

主权项

1. A method for multilayer pattern transfer, comprising:
forming an etch mask layer over a substrate; forming an orientation control layer over the etch mask layer; forming an organic planarization layer (OPL) over the orientation control layer; forming an ARC layer over the OPL layer; and forming a tapered etch through at least the ARC layer.