Semiconductor device and method of forming topside and bottom-side interconnect structures around core die with TSV

摘要

A semiconductor device has a core semiconductor device with a through silicon via (TSV). The core semiconductor device includes a plurality of stacked semiconductor die and semiconductor component. An insulating layer is formed around the core semiconductor device. A conductive via is formed through the insulating layer. A first interconnect structure is formed over a first side of the core semiconductor device. The first interconnect structure is electrically connected to the TSV. A second interconnect structure is formed over a second side of the core semiconductor device. The second interconnect structure is electrically connected to the TSV. The first and second interconnect structures include a plurality of conductive layers separated by insulating layers. A semiconductor die is mounted to the first interconnect structure. The semiconductor die is electrically connected to the core semiconductor device through the first and second interconnect structures and TSV.

主权项

1. A method of making a semiconductor device, comprising:
providing a first conductive layer; disposing a first semiconductor die over the first conductive layer; forming a first interconnect structure over the first conductive layer opposite the first semiconductor die; forming a conductive via through the first semiconductor die with the conductive via extending from a first surface of the first semiconductor die to a second surface of the first semiconductor die opposite the first surface; forming an insulating layer around the first semiconductor die; disposing a second conductive layer over the insulating layer and first surface of the first semiconductor die; and forming a second interconnect structure over the second conductive layer.