MONOLITHISCH INTEGRIERTE SCHALTUNGSANORDNUNG

摘要

The proposal is for a monolithically integrated circuit fitted in a disc-shaped monocrystalline silicon semiconductor (100) of a first type of conductivity having a first and a second main surface. The monolithically integrated circuit contains a vertical MOSFET power transistor (T1) consisting of a plurality of mutually parallel-connected partial transistors and is surrounded by a protective ring (4) of a second type of conductivity opposite to that of the semiconductor body (100). At least one region (7, 8) of the type of conductivity of the semiconductor body (100) but with a greater discontinuity concentration is diffused into the protective ring (4) from the first main surface (13) to form at least one active and/or passive peripheral circuit component (T2) which is designed for protection and/or regulation and/or control.