| 摘要 |
<p>The device is of the type used for semiconductor exposure apparatus equipped with a projection lens (3) for transferring a pattern, formed on a reticle (2), onto a substrate (4) with an exposure light. The device is adapted for detecting the position of an alignment mark (WMX) formed on the substrate. The device includes light irradiation means (10), detector (21), an irradiation light correcting optical element (GXA1, GXA2) and a detection light correcting optical element (GXA3). The light irradiation means irradiates the alignment mark, through the projection lens, with alignment light having a wavelength different from that of the exposure light. The detector detects, through the projection optical system, light from the alignment mark. The irradiation light correcting optical element is provided between the reticle and the substrate and adapted for deflecting the irradiation optical path so as to correct, by a predetermined amount, the longitudinal chromatic aberration and the chromatic aberration of magnification of the projection optical system for the irradiation light. The detection light correcting optical element is provided between said reticle and said substrate and adapted for deflecting the detection optical path toward the peripheral part of an exposure area of said reticle, so as to correct, by a predetermined amount, the chromatic aberration of magnification of the projection optical system for the detection light. <IMAGE></p> |
