| 摘要 |
PURPOSE:To form a superlattice by the molecular beam epitaxial method by substrate rotation and make the distribution of the substance on the surface uniform. CONSTITUTION:This is one example of HEMT being manufactured by MBE method. This HEMT has contact layers 117 and 118 consisting of Inlays, a doping layer 115 consisting of InAlAs, a buffer layer 113, a channel layer 114 consisting of InGaAs, and a superlattice buffer layer 112 consisting of AlAs/ InAs, on a semiconductor substrate 111, and further a source electrode 117, a drain electrode 18, and a gate electrode 119 are made. The buffer layer 113 is a mixed crystal layer (InAlAs) consisting of a substance (AlAs, InAs), which constitutes the superlattice of the superlattice buffer layer 112, so this HEMT has a feature in this point. |
