| 摘要 |
PURPOSE:To increase a light emitting output and miniaturize a device and enhance its integration by directly exciting an active layer with an electron beam radiated from an electronic source of multi-chip field emission type. CONSTITUTION:A field emission chip is formed on a metallic conductive substrate 1 by a method using an anisotropic etching of Si crystals. Together with forming the field emission chip, NaI:Tl crystals 6 are grown on the surface of a quartz plate 7 by the Bridgman method. Next, an Al film 11 is vacuum deposited on the surface of the NaI:Tl crystals 6. The conductive substrate 1 and the quartz plate 7 between which an insulating film 4 is put are connected with solder such an In under vacuum. Finally, an Al2O3 film 9 is deposited on an emission edge by a sputtering method and an Au film 8 is formed, as an electrode, on the rear of the quartz plate. A blue laser beam can be obtained by applying a voltage of several volts to hundreds of volts between the conductive substrate 1 and the quartz plate 7. |
