| 摘要 |
PURPOSE:To obtain a resist pattern high in resolution and superior in the profile of a pattern after development and heat resistance by using a esterification product of a specified novolak resin with a specified quinonediazido sulfonic acid in a specified esterification rate as a photosensitive compound. CONSTITUTION:The quinonediazido type photosensitive compound is composed mainly of the quinonediazido sulfonic ester of the novolak resin of the condensation product from of at least one of phenol compounds represented by formula I and at least one of ketone or aldehyde derivative represented by formula II. The novolak resin has a weight average molecular weight of 666-2200, and the quinonediazido sulfonic ester has a esterification rate of 40-70%. In formulae I and II, R<1> is alkyl; each of R<1> and R<2> is, independently, H, alkyl, or the like; lis 0, 1, or 2; m is 2, 3, or 4, and l+m is 2-4. |
