| 摘要 |
<p>The invention relates to an ultra-frequency field-effect transistor of the type with quantal wire in which the electrons have just one degree of freedom (1D). In order to decrease the gateway resistances, the channel (1D) is confined beneath the gate (7) and formed by a plurality of quantal points (21) separated from one another by holes (20). The gateway zones (18, 19) are made of semiconductors with two degrees of freedom (TEGFET) or of superconductors. Application to ultra-frequency transistors. <IMAGE></p> |
