| 摘要 |
PURPOSE:To conduct a relative alignment of a mask and a wafer with high accuracy at low cost in an X-ray reduction exposure method by detecting a wafer mark on the back of the wafer by a mark detector, by detecting a reference mark on the mask by an X-ray mark detector and by correcting preliminarily the misalignment of the optical axes of the two detectors. CONSTITUTION:A slit opening 26 on a photo detector 25 is located near the position where the image of a mask reference mark 23 is formed. Scanning an X-Y stage 7, the position where the center of the image of the mask reference mark and the center of the slit opening 26 coincide with each other is searched. When this position is found, the coordinates of the X-Y stage is stored. Nextly, the position of the stage where the center of a wafer reference mark 30 coincides with the central axis of a wafer back surface detector 11 is searched and when this position is found, the coordinates of the X-Y stage is stored. The shift between the two coordinates is regarded as the axis offset value of the detector 11. The position of a wafer mark 10 is adjusted for the offset value and the X-Y stage 7 is moved by the predetermined amount from the arrangement position of a mask pattern and then exposure is conducted. |
