| 摘要 |
PURPOSE:To enable the products having excellent element characteristics to be stably manufactured by a method wherein the feasibility of the later steps is proved using the photoluminescence light emitting intensity of Inlays comprising the lower layer of a double heterostructure as the index value of the feasibility discrimination. CONSTITUTION:A diffraction lattice 2 is formed on an n-InP crystal substrate 1 by dry-etching step and then an n-InGaAsP guide layer 3, an InGaAsP active layer 4, a p-InP clad layer 5, a p-InGaAsP layer (crystallinility evaluated layer) 6 and a p-InP cap layer 7 are successively deposited by organic metal vapor growing step so that a double hetero structure may be composed of the layers 6 and 7. At this time, within one completion stage of the first time growing step, the photoluminescence light emitting intensity of the p-InGaAsP layer 6 is measured and after confirming such an intensity meeting specific reference value, later steps are to be started. Through these procedures, the photosemiconductor device having excellent element characteristics can be manufactured even if the diffraction lattice 2 is formed by the dry-etching step to be crystal-grown by the organic metal vapor growing step. |
