发明名称 |
Method of forming heterostructure field effect transistor |
摘要 |
A heterostructure field effect transistor having a buffer layer comprising a first compound semiconductor material. A layer of second semiconductor material different from the first material is formed over the buffer layer. The second layer has a total thickness less than 250 ANGSTROM . A doped third semiconductor layer formed over the second layer. The net has a dopant concentration in the second layer is greater than the net dopant concentration in the third layer. A gate layer is positioned over the third layer. In a preferred embodiment the second layer is a pulse-doped pseudomorphic material. There is also provided a method for making the heterostructure field effect transistor. A doped pseudomorphic semiconductor layer of a first conductivity type is formed between first and second other semiconductor layers, the second layer including a net dopant concentration of the first conductivity type. A Schottky gate electrode is formed in contact with the second layer.
|
申请公布号 |
US5196359(A) |
申请公布日期 |
1993.03.23 |
申请号 |
US19910710596 |
申请日期 |
1991.06.05 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
SHIH, HUNG-DAH;KIM, BUMMAN |
分类号 |
H01L29/772;H01L29/778 |
主分类号 |
H01L29/772 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|