TEMPERATURKOMPENSATION FUER HALBLEITER-LOGIKGATTER.

摘要

A first depletion omde MESFET has first and second terminal regions in the semiconductor body and a gate terminal region comprising a metallic electrical conductor on a surface of the semiconductor body. The first depletion mode MESFET first terminal region is operated at a higher voltage than the first depletion mode MESFET second terminal region. A second depletion mode MESFET has first and second terminal regions in the semiconductor body and a gate terminal region. The second depletion mode MESFET first terminal region is operated at a higher voltage than the second depletion mode MESFET!second!terminal!region.!The!second!depletion!mode!MESFET gate terminal region is electrically connected to the second MESFET!second!terminal!region.!The!second!depletion!mode!MESFET first terminal region is electrically connected to the first depletion mode MESFET second terminal region.