| 摘要 |
<p>The present invention relates to a precision resistor formed on a semiconductor substrate (8). This resistor comprises two strips of a resistive conductive material (1, 2) on an insulator (4) each having a first resistance per square Rp and a normal width Wp, together defining, in the semiconductor substrate, a strip (6) of normal width Wm doped using the strips of resistive conductive material as mask and having a second resistance per square Rm. Two metallisations connect the first and second end respectively of the three so-called strips. The widths and resistances per square are chosen so that RpWp = 2RmWm. <IMAGE></p> |
