Sensor element prepn. with ion-selective electrode - by working cavity into chip and filling with ion-selective membrane soln.

摘要

Prepn. of a sensor element (I) with at least one ion-selective electrode on an integrated circuit comprises: (i) processing a chip from a material, e.g., silicon which is suitable for microstructures using usual semiconductor and solid technologies and has further microstructured functional elements whereby: (a) a cavity with capillary structures (capillary containment) is worked into the surface of the chip; (b) this containment is filled with a soln. forming an ion-selective membrane which spreads out via capillary forces and leaves an ion-selective membrane upon evapn. ADVANTAGE - This process overcomes problems concerned with incompatibility with technological processes of microelectronics.