| 摘要 |
<p>PURPOSE:To embody high resistance between gate electrode wirings by oxidizing or removing etching residue products. CONSTITUTION:After a gate electrode wiring layer 2 is formed on an insulation substrate 1, the gate electrode wiring layer 2 is etched and a silicon oxide film 8 is formed on the surfaces of the insulation substrate 1 and a resist 9 in such a condition that the resist may remain, thereby oxidizing etching residue products 10. After the insulation film 8 and the gate electrode wiring layer 2 are formed on the insulation substrate 1, the gate electrode wiring layer 2 is etched. Etching is carried out almost up to the surface of the insulation substrate 1 which includes the insulation layer 8 while the etching residue products are eliminated simultaneously. It is, therefore, possible to enhance the reliability of TFT operation since higher resistance between the gate electrode wirings can be attained.</p> |
