Plasma-aided deposition of film for integrated semiconductor circuit - using neutral particles, activated by microwave in separate chamber, and non-excited reaction gas, etc.

摘要

In the process for plasma-aided deposition of films from the gas phase, with external microwave excitation, reaction gases are activated in a chamber separate from the reactor. Only neutral activated particles are supplied to the reactor, to which non-excited reaction gases are also supplied. The film material is densified during deposition by coupling 5% max. of the normal high-frequency power required in plate reactors. ADVANTAGE - Improved stability of deposited films.