| 摘要 |
PURPOSE:To provide an adder in which a structure of a resonance tunnel transistor is improved to be reduced in size, a simple structure and less number of elements are provided by using the improved resonance tunnel transistor and which can be operated at a high speed. CONSTITUTION:A multicollector type semiconductor device has first and second resonance tunnel transistors using a resonance tunnel effect. The first transistor has a common base electrode B, a common emitter electrode E, and a first collector electrode C1 to be connected to the electrode B through a first collector barrier. The second transistor has a common base electrode B, a common emitter electrode E and a second collector electrode C2 to be connected to the base B through a second collector barrier. |
