发明名称 |
Semiconductor device |
摘要 |
A semiconductor device includes a semiconductor structure, a plurality of gate structures, at least one source/drain structure, at least one trench, a dielectric pattern, and a conductive structure. The gate structures are disposed on the semiconductor structure. The source/drain structure is disposed between two adjacent gate structures. The trench is disposed between the two adjacent gate structures and corresponding to the source/drain structure. The dielectric pattern is disposed on sidewalls of the trench. The conductive structure is disposed in the trench and electrically connected to the source/drain structure. The conductive structure includes a first portion surrounded by the dielectric pattern and a second portion connected to the source/drain structure, and the first portion is disposed on the second portion. A width of the first portion is smaller than a width of the second portion. |
申请公布号 |
US9496176(B1) |
申请公布日期 |
2016.11.15 |
申请号 |
US201615176142 |
申请日期 |
2016.06.07 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
Tung Yu-Cheng;Liou En-Chiuan |
分类号 |
H01L21/768;H01L29/417;H01L29/78;H01L29/66 |
主分类号 |
H01L21/768 |
代理机构 |
|
代理人 |
Hsu Winston;Margo Scott |
主权项 |
1. A semiconductor device, comprising:
a semiconductor structure; a plurality of gate structures disposed on the semiconductor structure, at least one source/drain structure disposed between two adjacent gate structures; at least one trench disposed between the two adjacent gate structures and corresponding to the source/drain structure; a dielectric pattern disposed on sidewalls of the trench; and a conductive structure disposed in the trench and electrically connected to the source/drain structure, wherein the conductive structure comprises an first portion surrounded by the dielectric pattern and a second portion connected to the source/drain structure, and the first portion is disposed on the second portion, wherein a width of the first portion is smaller than a width of the second portion. |
地址 |
Hsin-Chu TW |