| 摘要 |
PURPOSE:To enable the production of the semiconductor optical waveguide of a GaAs system which is fine and is low in loss without executing dry etching of the semiconductor by forming three-dimensional optical waveguides as selective crystal growth of GaInP. CONSTITUTION:A 1st clad layer 102 consisting of the GaInP, a waveguide layer 103 consisting of GaAs and a 2nd clad layer 104 consisting of the GaInP are successively laminated on a semiconductor substrate 101 consisting of GaAs. A 3rd clad layer 105 consisting of the GaInP is selectively grown thereon to form a ridge part. Namely, a thin dielectric film 201 to serve as a mask at the time of selective growth is patterned and the ridge part is formed by selective crystal growth of the GaInP. Then, not only the flanks of the ridge but all the surfaces as well are made into smooth crystal surfaces and the generation of a scattering loss is obviated. The easy selective growth of the GaInP is possible and the uniform production of the fine optical waveguides over a wide area is possible. |
