| 摘要 |
<p>PURPOSE:To improve reading operation of a programmable read-only memory. CONSTITUTION:In plural cells provided with MOS transistor CL1, CL2 which has a floating gate and a control gate, and similarly connected to a bit line, electric charges caused by over-erasing in the floating gate are neutralized by voltage of the control gate in reading operation. Therefore, it is enabled that data stored in the cell is not read in error.</p> |
