Semiconductor device and liquid crystal display.

摘要

A semiconductor device has an NMOS transistor and a PMOS transistor formed on at least one monocrystal Si region formed in a thin-film Si layer formed on an insulation layer. The thickness TBOX of the insulation layer on which the NMOS and PMOS transistors are formed, the voltage VSS of a low-voltage power supply and the voltage VDD of a high-voltage power supply for the NMOS and PMOS transistors satisfy a relationship expressed by the following equation: <MATH> where K1 IDENTICAL epsilon BOX (QBN + QBP) , K2 IDENTICAL 2 phi FN + 2 phi FP - 1.03, epsilon BOX is the dielectric constant of the base insulation layer, QBN and QBP are bulk charges when the widths of depletion layers of the NMOS and PMOS transistors are maximized, and phi FN and phi FP are pseudo Fermi potentials of the NMOS and PMOS transistors. <IMAGE>