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发明名称
Method of manufacturing a single grain silicon and thing film transistor comprising a single grain silicon channel
摘要
단결정 실리콘 및 이를 포함하는 박막 트랜지스터의 제조 방법이 개시된다. 개시된 단결정 실리콘 형성 방법은 실리콘층 측부에 사이드월을 형성하고, 그 상부에 장벽층을 형성한 뒤, 레이저에 의한 열처리 공정을 실시함으로써, 실리콘층을 측면 단결정시킬 수 있다.
申请公布号
KR101678669(B1)
申请公布日期
2016.11.22
申请号
KR20090000116
申请日期
2009.01.02
申请人
삼성전자주식회사
发明人
선우문욱;마동준;김연희;이정현;정석재
分类号
H01L21/336;H01L29/786
主分类号
H01L21/336
代理机构
代理人
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