| 摘要 |
PURPOSE:To prevent a decline in alignment accuracy due to the expansion or contraction of a wafer or mask, which becomes a problem when measuring the location of a shot by only one place within the shot and to obtain a very accurate alignment even for a large shot. CONSTITUTION:In a pattern for alignment measurement by an exposure method wherein exposure is conducted by step and-repeat movement, the plurality of the same pattern regions for alignment measurement 13A and 13B are located in one and the same shot. |
