METHOD OF FABRICATING CAPACITOR FOR A HIGH INTEGRATED MOS DEVICE

摘要

The method employing a layered capacitor forms a layer for expansion of a capacitor area under a polycrystal silicon layer used as a capacitor storage node. The method comprises the steps of: forming gates having sidewall spacers respectively on the active region and the field region formed on the substrate; forming an insulating oxide layer on the whole surface to form buried contacts between the gates by photo-etching; depositing a first polycrystal silicon layer and an oxide layer in order and form grooves in the oxide layer by removing the oxide of a width on the respective gates through a process of photo-etching; depositing a second crystal silicon layer for a storage node and covering a photosensitive material sufficiently enough to cover the grooves on the gates; removing the unnecessary portion of the 1st crystal silicon layer by photo-etching to define the storage node; and forming in order a capacitor dielectric layer and a polycrystal layer for plate to remove the unnecessary portion by photo-etching.