MANUFACTURE OF WAFER FORMING SUBSTRATE AND SEMICONDUCTOR WAFER

摘要

PURPOSE:To easily obtain a semiconductor wafer, having a slackless cleavage plane as orientation flat surface, at a high yield rate. CONSTITUTION:The edge face of a GaAs single crystal ingot 1, is cut, its outer circumference is polished, and a cylindrical GaAs single crystal ingot 2 is formed. On the part where orientation flat will be cleaved on the side face of the above-mentioned ingot 2, a V-shaped cut groove 7 is formed in the direction in parallel with the direction of cleavage, and a wafer forming substrate 8 is formed by slicing. After the substrate 8 has been processed into a mirror face state, an epitaxial layer 51 is formed, a cleavage is formed from the V-shaped groove in the final process, and an orientation flat 4a is formed.