发明名称 METHOD FOR FORMING A LITHOGRAPHIC PATTERN IN A PROCESS FOR MANUFACTURING SEMICONDUCTOR DEVICES
摘要 <p>A method of printing a sub-resolution device feature (16) having first and second edges spaced in close proximity to one another on a semiconductor substrate (20) includes the steps of first depositing a radiation-sensitive material on the substrate, then providing a first mask image segment (11) which corresponds to the first edge. The first mask image segment is then exposed with radiation (10) using an imaging tool (12) to produce a first pattern edge gradient (14). The first pattern edge gradient defines the first edge of the feature in the material. A second mask image segment (13) is then provided corresponding to the second feature edge. This second mask image segment is exposed to radiation (10) to produce a second pattern edge gradient (17) which defines the second edge of the feature. Once the radiation-sensitive material has been developed, the two-dimensional feature is reproduced on the substrate.</p>
申请公布号 WO1993020482(A1) 申请公布日期 1993.10.14
申请号 US1993003126 申请日期 1993.03.29
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