| 摘要 |
PURPOSE:To provide a multilayer resist process for forming a desired resist pattern through a simplified process and reduced number of apparatus. CONSTITUTION:A specific gas is converted into plasma gas in the vicinity of a substrate 14 and a lower resist layer 17 is exposed with a lift 16 in a predetermined wavelength region emitted from plasmas gas with an upper pattern layer 15 as a mask, while the exposed part of an intermediate layer 12 is removed through etching and then subjected to development thus forming a resist pattern body 18. |
