| 摘要 |
<p>A liquid phase epitaxy method for forming thin crystalline layers of device quality silicon having less than 5 x 1016 Cu atoms/cc impurity, comprising: preparing a saturated liquid solution melt (2) in crucible (3) of Si in Cu at about 16 % to about 90 % wt. Si at a temperature range of about 800 °C to about 1400 °C in an inert gas by heater (4); immersing a substrate through port (1) in the saturated solution melt and holding the substrate immersed in the solution melt for a period of time sufficient to cause growing Si to precipitate out of the solution to form a crystalline layer of Si on the substrate; and withdrawing the substrate from the solution.</p> |
