| 发明名称 |
Method of etching anti-reflection coating. |
| 摘要 |
<p>A polyimide layer used in manufacturing semiconductor integrated circuits is etched in a plasma comprising O2, Ar, and CHF3. The plasma produces excellent critical dimension control and yields good resist to polyimide etching selectivity.</p> |
| 申请公布号 |
EP0573212(A2) |
申请公布日期 |
1993.12.08 |
| 申请号 |
EP19930304120 |
申请日期 |
1993.05.27 |
| 申请人 |
AMERICAN TELEPHONE AND TELEGRAPH COMPANY |
发明人 |
TA, THUY BICH |
| 分类号 |
G03F7/11;G03F7/36;H01L21/027;H01L21/30;H01L21/302;H01L21/3065;H01L21/311;H01L21/312;(IPC1-7):H01L21/027 |
主分类号 |
G03F7/11 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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