发明名称 THREE LAYER RESIST METHOD
摘要 PURPOSE:To easily peel off only the top layer resist in a three layer resist. CONSTITUTION:To easily peel off only the top layer resist 14 in the under layer resist 12, the intermediate layer 13 and the top layer resist 14 successively laminated on a substrate 11, a low conc. resolving resist 14 is used as the top layer resist. Thus, the top layer resist is easily removed by a conventional TMAH based developer of 2.38%. As a result, the top layer resist is easily reformed and the yield in semiconductor producing process is improved.
申请公布号 JPH05341533(A) 申请公布日期 1993.12.24
申请号 JP19920147810 申请日期 1992.06.09
申请人 SONY CORP 发明人 SAITO MASAO
分类号 G03F7/26;G03F7/32;H01L21/027;(IPC1-7):G03F7/26 主分类号 G03F7/26
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