| 摘要 |
The present invention provides an ohmic contact device which comprises : a first layer (2) made of a first compound semiconductor having a first energy band gap ; a superlattice (3) in contact with the first layer, the superlattice having modulation-periods comprising alternating a first very thin layer made of the first compound semiconductor and a second very thin layer made of a second compound semiconductor having a second energy band gap being smaller than the first energy band gap, thicknesses of the first very thin layers being gradually reduced from an interface of the first layer to an opposite interface and thicknesses of the second very thin layers are gradually increased from the interface of the first layer to the opposite interface ; a second layer (4) made of the second compound semiconductor in contact with the superlattice ; and a metal contact (5) in contact with the second layer. <IMAGE> |
