发明名称 Negative power supply
摘要 A negative power supply for generating and supplying a regulated negative potential to control gates of selected memory cells via wordlines in an array of flash EEPROM memory cells during flash erasure includes charge pumping means (12) formed of a plurality of charge pump stages (401-404) for generating a high negative voltage, and cancellation means coupled to each stage of the charge pump means for effectively canceling out threshold voltage drops in the charge pump means. A regulator means (16) responsive to the high negative voltage and a reference potential is provided for generating the regulated negative potential so that it is independent of an external supply potential (VCC).
申请公布号 US5282170(A) 申请公布日期 1994.01.25
申请号 US19920964807 申请日期 1992.10.22
申请人 ADVANCED MICRO DEVICES, INC. 发明人 VAN BUSKIRK, MICHAEL A.;CHEN, JOHNNY C.;CHANG, CHUNG K.;CLEVELAND, LEE E.;MONTALVO, ANTONIO
分类号 G11C17/00;G11C5/14;G11C16/06;H02M3/07;H03K19/096;(IPC1-7):G11C13/00 主分类号 G11C17/00
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