DOPANT-FREE ALGAN-BASED ULTRAVIOLET LIGHT EMITTING DIODE AND PREPARATION METHOD THEREOF
摘要
The present invention provides a dopant-free AlGaN-based ultraviolet (UV) light emitting diode (LED) and preparation method thereof. The dopant-free AlGaN-based UV LED comprises: a substrate (1); a dopant-free n-type layer (2) deposited on the substrate (1); an active area (3) deposited on the dopant-free n-type layer (2); and a dopant-free p-type layer (4) deposited on the active area (3). The dopant-free AlGaN-based UV LED does not adopt any dopant, increasing material quality of transistor and simplifying steps of growing layers to form the material.
申请公布号
WO2016197650(A1)
申请公布日期
2016.12.15
申请号
WO2016CN76851
申请日期
2016.03.21
申请人
INSTITUTE OF SEMICONDUCTORS, CHINESE ACADEMY OF SCIENCES