| 摘要 |
<p>PURPOSE: To prevent the damage of resistance film and change in element characteristic by exposing an element area by etching the interlayer insulation film of the element area and applying various steps such as formation of metallic layer and intermediate film on the entire surface, etc., thereafter. CONSTITUTION: An interlayer insulation film 55 on an element area 53 is removed and a contact hole 56 is formed, and after a natural oxide film 54 is removed, a metallic layer 61 and an intermediate film 63 are formed successively on the entire surface of the exposed element area 53. The specified areas of the natural oxide film 65, intermediate film 63 and metallic layer 61 are removed selectively to form an opening 69. The natural oxide film 65 remaining in an area other than the opening 69 is etched and a resistance film 71 is formed on the entire surface. In addition, the resistance film 71 in the area other than the opening 69 is removed to form a resistance, and a protection layer 75 is formed on the entire surface of the formed resistance. Thus, the damage of resistance film and change in element characteristic due to etching and heat treatment can be prevented.</p> |
