| 摘要 |
PURPOSE:To make an element a very fine and highly integrated one by making the width of an unexposed part of a photoresist film smaller than that of an exposed part. CONSTITUTION:A gate oxide film 12 is formed on the surface of a silicon substrate 11 and then a polycrystalline silicon layer 13 is deposited on the gate oxide film 12. On the polycrystalline silicon layer 13, a negative photoresist film 14 is formed and a first glass mask for photolithography is installed above the photo resist film 14. After that, the photoresist film 14 is exposed using the first glass mask. Nextly, a part of the photoresist film 14 which is not exposed by the first glass mask is exposed using a second glass mask 16. Then, the photoresist 14 is developed. By this method, an element can be very fine and highly integrated. |
