| 摘要 |
PURPOSE:To provide a configuration in which a decrease in a light emitting output is eliminated due to breakdown or application of a strain caused by transmission of an impact to a layer (P-N layer) to emit a light when an electrode of a light emitting diode is wire bonded in the formation of the electrode of a semiconductor element and particularly the diode. CONSTITUTION:Recesses are formed on layers 2, 3, 4 to emit lights, insulating films 6 over parts of its sidewall, bottom and uppermost layer 4 are formed, and an electrode 5 is formed on the layer 4 in contact therewith. That is, transmission of an impact at the time of wire bonding at least to the layers 3, 4 to emit the lights is obviated. |
