| 摘要 |
PURPOSE:To increase the utilization rate of an area without making the outside diameter of an element large by a method wherein an alignment pattern as a registering pattern in the manufacture of a semiconductor is installed in the position of a cathode slit. CONSTITUTION:Alignment patterns 16a, 16b used for an overlap operation by photolithography in the manufacture of an element are formed in positions of two cathode slits 6a which are symmetric with respect to the center of the element. |
